Overview:
The Senior Level High Voltage LNDMOS Device Engineer at Diodes, Inc. leads the design, development, and optimization of high‑voltage (30–100V+, up to 120V) LNDMOS devices using junction or deep trench isolation. The role bridges device physics and manufacturing to deliver reliable, efficient power devices for automotive, industrial, consumer, and renewable‑energy applications.

Key Responsibilities:
• Device Design and Development: Lead high‑voltage LNDMOS design focusing
on breakdown voltage, Rds(on), charge balance, and ruggedness. Use
CAD/TCAD for electrical, thermal, and reliability simulations to optimize devices
(30–120V, junction or trench‑isolated).
• Process Integration: Work with process teams to define/refine fabrication flows,
materials, doping, and steps to meet performance, manufacturability, and yield
targets.
• Device Characterization: Plan and execute electrical/thermal/reliability tests.
Characterize isolation structures (junction/trench), validate models, extract
parameters, and identify improvement opportunities.
• Technology Innovation: Research and propose new architectures or structures
(e.g., trench, superjunction, shielded gate) to enhance LNDMOS performance
and support next‑generation products.
• Failure Analysis and Problem Solving: Perform FA using SEM/TEM/FIB/EDX and
simulations to identify root causes and recommend corrective actions.
• Cross-functional Collaboration: Partner with design, process, test, packaging,
and product teams to ensure smooth development and product launch.
• Documentation and Reporting: Prepare technical documentation—design
specs, simulations, process flows, and characterization reports—and
communicate results to stakeholders.
• Product Qualification and Reliability: Support qualification through reliability
tests (HTRB, TDDB, ESD, UIS) and collaborate with quality teams to meet
international standards and customer needs.
• Yield Enhancement and Cost Optimization: Analyze manufacturing data to
identify yield/cost issues and work with fab teams on implement solutions.
• Technical Support: Provide expertise to application engineers, field teams, and
customers for device integration, troubleshooting, and performance
optimization.

Qualifications:
• Minimum 10 years of experience in power semiconductor device engineering,
focused on high‑voltage LNDMOS/LDMOS (30–120V). Strong understanding of
deep trench and junction isolation; experience with IGBT or SiC/GaN MOSFETs is
a plus.
• Proficient with device/process simulation tools (e.g., Sentaurus, Atlas).
• Solid understanding of semiconductor physics, HV breakdown, isolation
structures, and reliability mechanisms.
• Hands‑on experience in wafer fabrication, cleanroom operations, and device
characterization.
• Familiar with advanced failure analysis tools and methods.
• Knowledge of device reliability and ruggedness standards.
• Skilled in statistical analysis and data‑driven problem solving.
• Strong analytical skills and attention to detail.
• Excellent technical communication and documentation abilities.
• Able to work independently and collaboratively across teams.
• Innovative, proactive problem‑solver.
• Results‑oriented with strong quality and continuous‑improvement mindset.

工作經驗：10年以上
學歷限制：碩士

休假制度：週休二日